advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 40v fast switching characteristic r ds(on) 25m low on-resistance i d 7.8a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 1 AP9465GEM rohs-compliant product 200811133 parameter rating drain-source voltage 40 gate-source voltage + 16 continuous drain current 3 7.8 continuous drain current 3 6.3 pulsed drain current 1 30 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching,ruggedized devic e design, ultra low on-resistance and cost-effectiveness. s s s g d d d d so-8 s g d the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m ? ? ?
AP9465GEM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a = 150 o c 10 30 50 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 3 6 9 12 15 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10.0 20.0 30.0 40.0 50.0 0 1020304050 i d , drain current (a) r ds(on) (m ?
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP9465GEM 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 : /w 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 14 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =20v v ds =25v v ds =30v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 10 20 30 40 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9465 g em ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement
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